Semiconductor processing chamber

ABSTRACT

Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of, and priority to U.S. ProvisionalPatent Application No. 62/900,042, filed 13 Sep. 2019, the contents ofwhich are hereby incorporated by reference in their entirety for allpurposes.

TECHNICAL FIELD

The present technology relates to semiconductor systems, processes, andequipment. More specifically, the present technology relates tosemiconductor processing systems and components.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forremoval of exposed material. Chemical etching is used for a variety ofpurposes including transferring a pattern in photoresist into underlyinglayers, thinning layers, or thinning lateral dimensions of featuresalready present on the surface. Often it is desirable to have an etchprocess that etches one material faster than another facilitating, forexample, a pattern transfer process or individual material removal. Suchan etch process is said to be selective to the first material. As aresult of the diversity of materials, circuits, and processes, etchprocesses have been developed with a selectivity towards a variety ofmaterials.

Etch processes may be termed wet or dry based on the materials used inthe process. A wet HF etch preferentially removes silicon oxide overother dielectrics and materials. However, wet processes may havedifficulty penetrating some constrained trenches and also may sometimesdeform the remaining material. Dry etch processes may penetrate intointricate features and trenches, but may not provide acceptabletop-to-bottom profiles. As device sizes continue to shrink innext-generation devices, the ways in which systems deliver precursorsinto and through a chamber may have an increasing impact. As uniformityof processing conditions continues to increase in importance, chamberdesigns and system set-ups may have an important role in the quality ofdevices produced.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Exemplary semiconductor processing systems may include a pedestalconfigured to support a semiconductor substrate. The pedestal may beoperable as a first plasma-generating electrode. The systems may includea lid plate defining a radial volume. The systems may include afaceplate supported with the lid plate. The faceplate may be operable asa second plasma-generating electrode. A plasma processing region may bedefined between the pedestal and the faceplate within the radial volumedefined by the faceplate. The faceplate may define a plurality of firstapertures. The systems may include a showerhead positioned between thefaceplate and the pedestal. The showerhead may define a plurality ofsecond apertures comprising a greater number of apertures than theplurality of first apertures.

In some embodiments, the showerhead may be or include a dielectricmaterial. The showerhead may define at least twice as many apertures asthe faceplate. Each aperture of the plurality of second apertures may beoffset from each aperture of the plurality of first apertures. A firstsubset of apertures of the plurality of second apertures may becharacterized by a similar aperture pattern as the plurality of firstapertures. Each aperture of the first subset of apertures may be offsetfrom an associated aperture of the plurality of first apertures along anangle from a central axis through the showerhead. The first subset ofapertures of the plurality of second apertures may include a similarnumber of apertures as a number of apertures in the plurality of firstapertures.

A second subset of apertures of the plurality of second apertures may becharacterized by a similar aperture pattern as the plurality of firstapertures. Each aperture of the second subset of apertures may be offsetfrom an associated aperture of the plurality of first apertures along aradius from a central axis through the showerhead. The second subset ofapertures of the plurality of second apertures may be or include asimilar number of apertures as a number of apertures in the plurality offirst apertures. The processing system may also include an annular linerpositioned within the radial volume defined by the lid plate. Theannular liner may be characterized by a first surface facing theshowerhead and a second surface opposite the first surface. The annularliner may define a protrusion extending about an exterior surface of theannular liner. The protrusion may be recessed from the first surface ofthe annular liner and may define a first ledge facing the first surfaceof the annular liner and a second ledge facing the second surface of theannular liner. The processing system may further include a firstelastomeric element extending about the first ledge, and a secondelastomeric element extending about the second ledge.

The first elastomeric element may extend proud of the first surface ofthe annular liner. The showerhead may be seated on the first elastomericelement. The processing system may also include a spacer seated on thelid plate, and the spacer may define a first recessed ledge. The secondelastomeric element may be seated on the first recessed ledge of thespacer. The spacer may define a second recessed ledge radially outwardof the first recessed ledge. The showerhead may define a plurality ofnotches about an exterior edge of the showerhead. The semiconductorprocessing system further include a plurality of alignment pins. Eachalignment pin of the plurality of alignment pins at least partially maybe disposed within a notch of the plurality of notches. Each alignmentpin of the plurality of alignment pins may be seated on the secondrecessed ledge of the spacer.

An exterior of the faceplate may be characterized by an oxide coating.The showerhead may be characterized by a first surface facing thefaceplate. The plurality of second apertures may extend from the firstsurface of the showerhead to a second surface of the showerhead oppositethe first surface of the showerhead. Each aperture of the plurality ofsecond apertures may be characterized by a profile limiting a linearpath through the aperture in a direction orthogonal to the secondsurface of the showerhead. The first surface of the showerhead may bedisposed within 2 mm from the faceplate.

Some embodiments of the present technology may encompass semiconductorprocessing systems. The systems may include a lid plate at leastpartially defining a radial volume for plasma processing. The systemsmay include a spacer seated on the lid plate and at least partiallyextending within the radial volume. The spacer may be characterized by afirst surface and a second surface opposite the first surface. Thespacer may be seated on the lid plate along the second surface of thespacer. The systems may include a faceplate seated on the first surfaceof the spacer and at least partially defining the radial volume fromabove. The faceplate may define a plurality of first apertures. Thesystems may include a gasbox. The faceplate may be disposed between thegasbox and the spacer. The gasbox may define a central aperture, and thegasbox may define a first channel within a first surface of the gasbox.

In some embodiments, the systems may also include a heater extendingthrough the first channel. The first channel may be characterized by aspiral profile within the first surface of the gasbox. The heater mayextend within the first channel for an integral number of turns. Thesystems may include a cover plate extending across the first channeldefined within the first surface of the gasbox. The gasbox may furtherdefine a second channel within the first surface of the gasbox radiallyinward of the first channel. The gasbox may define a third channelwithin the first surface of the gasbox radially outward of the firstchannel. The semiconductor processing systems may include a first gasketdisposed within the second channel within the first surface of thegasbox. The systems may include a second gasket disposed within thethird channel within the first surface of the gasbox. The cover platemay form a seal between the first gasket and the second gasket.

The gasbox may be characterized by a second surface opposite the firstsurface, and the central aperture may flare at the second surface of thegasbox. The gasbox may define a recessed ledge from the first surface ofthe gasbox extending into the central aperture. The systems may includean insert seated on the recessed ledge within the central aperture. Theinsert may define one or more apertures providing access through thecentral aperture of the gasbox. The lid plate may define at least oneaperture at least partially extending through the lid plate from a firstsurface of the lid plate on which the spacer is seated. The spacer maydefine at least one aperture, each aperture of the at least one apertureof the spacer axially aligned with an associated aperture of the atleast one aperture of the lid plate. Each aperture of the at least oneaperture of the spacer may be characterized by a diameter less than adiameter of the associated aperture of the at least one aperture of thelid plate at the first surface of the lid plate. The systems may includea jack member disposed within each aperture of the at least one apertureof the lid plate. A surface of each jack member may be characterized bya diameter greater than a diameter of each aperture of the at least oneaperture of the spacer, and removal of the jack member may be configuredto separate the spacer from the lid plate.

Some embodiments of the present technology may also encompasssemiconductor processing systems. The systems may include a lid platedefining a first radial volume and a second radial volume laterallyseparated along the lid plate from the first radial volume. The systemsmay include a first lid stack seated on the lid plate and axiallyaligned with the first radial volume. The systems may include a first RFmatch, where the first lid stack may be disposed between the lid plateand the first RF match. The systems may include a second lid stackseated on the lid plate and axially aligned with the second radialvolume. The systems may include a second RF match, where the second lidstack may be disposed between the lid plate and the second RF match.

In some embodiments, one or more components of the first lid stack andone or more components of the second lid stack may include an oxidecoating. The first lid stack may include a first gasbox defining acentral aperture. The second lid stack may include a second gasboxdefining a central aperture. The systems may include a first outletmanifold positioned on the first gasbox along a first surface of thefirst outlet manifold. The first outlet manifold may define a centralaperture extending partially through the first outlet manifold from thefirst surface of the first outlet manifold towards a second surface ofthe first outlet manifold opposite the first surface of the first outletmanifold. The central aperture of the first outlet manifold may providefluid access to the central aperture of the first gasbox. The systemsmay include a first conductive pin electrically coupling the first RFmatch with the first outlet manifold.

The systems may include a second outlet manifold positioned on thesecond gasbox along a first surface of the second outlet manifold. Thesecond outlet manifold may define a central aperture extending partiallythrough the second outlet manifold from the first surface of the secondoutlet manifold towards a second surface of the second outlet manifoldopposite the first surface of the first outlet manifold. The centralaperture of the second outlet manifold may provide fluid access to thecentral aperture of the second gasbox. The systems may include a secondconductive pin electrically coupling the second RF match with the secondoutlet manifold. The first gasbox and the second gasbox may each definea first channel within a first surface of a respective gasbox on which arespective outlet manifold is positioned. Each first channel may becharacterized by a spiral profile within the first surface of therespective gasbox.

The systems may include a first heater extending through the firstchannel of the first gasbox, and a first RF filter may be coupled withthe first heater. The systems may include a second heater extendingthrough the first channel of the second gasbox, and a second RF filtermay be coupled with the second heater. The systems may include a firstgas block coupled with an exterior edge of the first outlet manifold.The first gas block may be coupled to provide fluid communication to thecentral aperture of the first outlet manifold. The systems may include asecond gas block coupled with an exterior edge of the second outletmanifold. The second gas block may be coupled to provide fluidcommunication to the central aperture of the second outlet manifold. Thesystems may include a gas feedthrough extending through the lid plateand coupled with each of the first gas block and the second gas block.The semiconductor processing system may include two gas feedthroughsextending through the lid plate and coupled with each of the first gasblock and the second gas block. The lid plate may define an aperturethrough which the gas feedthrough extends. The lid plate may be hingedlycoupled with a chamber body of the semiconductor processing system. Thechamber body may include an elastomeric element on which the gasfeedthrough seats when the lid plate is closed upon the chamber body.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, the systems may protect against corrosionbetter than conventional designs. Additionally, the symmetric electricaldesigns may improve RF uniformity, which may improve plasma uniformity.These and other embodiments, along with many of their advantages andfeatures, are described in more detail in conjunction with the belowdescription and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a schematic top plan view of an exemplary processingmainframe according to some embodiments of the present technology.

FIG. 2 shows a schematic isometric view of an exemplary semiconductorprocessing system according to some embodiments of the presenttechnology.

FIG. 3 shows a schematic partial cross-sectional view of an exemplaryprocessing chamber according to some embodiments of the presenttechnology.

FIG. 4 shows a schematic isometric view of an exemplary lid plateaccording to some embodiments of the present technology.

FIG. 5 shows a schematic partial cross-sectional view of an exemplarylid stack according to some embodiments of the present technology.

FIG. 6 shows a schematic exploded isometric view of lid stack componentsaccording to some embodiments of the present technology.

FIG. 7 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology.

FIGS. 8A-8B show schematic plan views of components with projectionsaccording to some embodiments of the present technology.

FIG. 9 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology.

FIG. 10 shows a schematic a top isometric view of components accordingto some embodiments of the present technology.

FIG. 11 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology.

FIGS. 12A-12D show schematic views of exemplary distributer insertsaccording to some embodiments of the present technology.

FIG. 13 shows a schematic partial isometric view of components accordingto some embodiments of the present technology.

FIG. 14 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

The present technology includes semiconductor processing systems,chambers, and components for performing semiconductor fabricationoperations. Many dry etch operations performed during semiconductorfabrication may involve multiple precursors. When energized and combinedin various ways, these etchants may be delivered to a substrate toremove or modify aspects of a substrate. Traditional processing systemsmay provide precursors, such as for etching, in multiple ways. One wayof providing enhanced precursors or etchants is to provide all of theprecursors through a remote plasma unit before delivering the precursorsthrough a processing chamber and to a substrate, such as a wafer, forprocessing. An issue with this process, however, is that the differentprecursors may be reactive with different materials, which may causedamage to the remote plasma unit or any components that may be contactedby the radical effluents. For example, an enhanced fluorine-containingprecursor may react with aluminum surfaces, but may not react with oxidesurfaces. An enhanced hydrogen-containing precursor may not react withan aluminum surface, but may react with and remove an oxide coating.Thus, if the two precursors are delivered through a remote plasma unittogether, they may damage any number of components.

The present technology may overcome these issues by utilizing componentsand systems configured to mix the precursors prior to delivering theminto the chamber, where local plasmas may be generated to produceetchants. Chambers and systems according to some embodiments of thepresent technology may also include component configurations thatmaximize thermal conductivity through the chamber, and increase ease ofservicing by coupling the components in specific ways. Several of thesystem components may also be coated or otherwise protected to limitreactivity and damage during fluid delivery through the chamber.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable todeposition and/or cleaning processes as may occur in the describedchambers. Accordingly, the technology should not be considered to be solimited as for use with etching processes alone.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and/or curing chambers according tosome embodiments. In the figure, a pair of front opening unified pods102 may supply substrates of a variety of sizes that are received byrobotic arms 104 and placed into a low pressure holding area 106 beforebeing placed into one of the substrate processing chambers 108 a-f,positioned in tandem sections 109 a-c. A second robotic arm 110 may beused to transport the substrate wafers from the holding area 106 to thesubstrate processing chambers 108 a-f and back. Each substrateprocessing chamber 108 a-f, can be outfitted to perform a number ofsubstrate processing operations including the dry etch processesdescribed herein in addition to cyclical layer deposition, atomic layerdeposition, chemical vapor deposition, physical vapor deposition, etch,pre-clean, degas, orientation, and other substrate processes.

The substrate processing chambers 108 a-f may include one or more systemcomponents for depositing, annealing, curing and/or etching adielectric, metal, or semiconductor film on the substrate wafer. In oneconfiguration, two pairs of the processing chambers, e.g., 108 c-d and108 e-f, may be used to deposit dielectric material on the substrate,and the third pair of processing chambers, e.g., 108 a-b, may be used toetch the deposited material. In another configuration, all three pairsof chambers, e.g., 108 a-f, may be configured to etch a dielectric,metal, or semiconductor material on the substrate. Any of the tandemsections may be outfitted with processing systems described below. Itwill be appreciated that additional configurations of deposition,etching, annealing, and curing chambers for dielectric films aresimilarly encompassed by system 100.

FIG. 2 shows a schematic cross-sectional view of an exemplarysemiconductor processing system 200 according to some embodiments of thepresent technology. System 200 may be incorporated onto the mainframeillustrated in FIG. 1 , and may include some or all of the componentsillustrated in that figure. The image may include a partial view of alid plate and lid stack, as well as associated components, but mayinclude additional components as will be explained further below. System200 may include a pair of adjacent processing chambers, or tandemprocessing chamber, which may include similar components to one another,and may share certain components of the system. The system may include alid plate 205, which may support lid stacks 210 a and 210 b for theseparate chambers. As will be described further below, lid plate 205 maydefine two radial volumes in some embodiments, and the lid stacks mayeach be aligned or coaxial with one of the radial volumes. For example,lid stack 210 a may be coaxial with a first radial volume defined by lidplate 205, and lid stack 210 b may be coaxial with a second radialvolume defined by lid plate 205. A box cover 212, shown transparently toillustrate covered components, may provide RF sealing, and may at leastpartially house the lid stacks 210.

The box cover 212 may also support additional components that may bedescribed in more detail below. For example, each chamber of the systemmay include an individual RF match 215 aligned with a chamber. Forexample, first RF match 215 a may be axially aligned or coaxial with acentral axis of lid stack 210 a, or the first processing chamber, andthe lid stack 210 a may be disposed between the lid plate 205 and thefirst RF match 215 a. Similarly, second RF match 215 b may be axiallyaligned or coaxial with a central axis of lid stack 210 b, or the secondprocessing chamber of the system 200, and the lid stack 210 b may bedisposed between the lid plate 205 and the second RF match 215 b. Boxcover 212 may also support additional components, such as a separate RFfilter 217 for each chamber. For example, each chamber may incorporate aheater that may interfere with the electrical signal for plasmaprocessing. The heater may be operated via an RF filter as illustrated,and as will be described further below, to improve losses andinterference with the plasma generation system. As illustrated, a firstRF filter 217 a may be coupled with the box cover, and coupled with aheater of the lid stack 210 a. A second RF filter 217 b may be coupledwith the box cover, such as on an opposite end as illustrated, forexample, and may be coupled with a heater of the lid stack 210 b. Byutilizing coaxial RF match setups as will be described further below,improved RF delivery, reduced losses, and improved plasma uniformity maybe produced by systems according to embodiments of the presenttechnology.

FIG. 3 shows a schematic partial cross-sectional view of an exemplaryprocessing chamber 300 according to some embodiments of the presenttechnology. For example, the figure may illustrate one half of thesystem 200 described above, and may illustrate the associated componentsof one chamber of the system. For example, processing chamber 300 mayinclude lid plate 205, or what may be about half of the lid plateassociated with one processing chamber, as well as one lid stack 210disposed on the lid plate 205. Lid plate 205 may be coupled with chamberbody 305, which may provide access to a pumping or exhaust system forextracting excess precursors or byproducts of processes performed. Thechamber 300 may also include a pedestal 310 or other substrate support,which may be configured to support a semiconductor substrate 312.

As noted above, processing system 200, or each individual chamber 300may be configured to perform plasma processing in embodiments of thepresent technology. For example, etch processes utilizing one or morehalogen precursors, such as chlorine-containing or fluorine-containingprecursors, may be delivered with one or more other reactive, neutral,or carrier precursors into a processing region 315. A plasma may begenerated in some embodiments within the processing region 315, such asa capacitively-coupled plasma, which may produce radical effluents thatreact and etch materials on substrate 312. The pedestal may operate asone of two plasma-generating electrodes in embodiments. One or morecomponents of the lid stack may operate as a second plasma-generatingelectrode in embodiments. Although either the pedestal or the lid stackcomponents may operate as the hot electrode, in some embodiments, acomponent of the lid stack may operate as the hot electrode, such as inelectrical communication with the RF match, while the pedestal may begrounded.

When the pedestal may be operated as RF hot, the field strength near thechamber wall and at the edge of the electrode may be relatively high,which may increase plasma strength at the edges. This may increase anedge etch rate on the substrate, which may decrease uniformity ofetching. When the polarity is reversed, and the lid stack operates asthe RF hot electrode, increased field strength near the chamber wall maystill produce increased radical effluents, but due to the relativedistance from the substrate, these increased radicals may not impact thesubstrate as readily. This may increase uniformity of etching at thesubstrate, which may improve processing across a substrate.

Chamber 300 may include a number of components coupled to produce lidstack 210. The lid stack may include one or more of a lid spacer 320, ashowerhead 325, a liner 327, a faceplate 330, a blocker plate 335, agasbox 340, a cover plate 345, and an outlet manifold 350. Thecomponents may be utilized to distribute a precursor or set ofprecursors through the chamber to provide a uniform delivery of etchantsor other precursors to a substrate for processing, and/or may be used toprotect chamber components as will be described below. In someembodiments, some of these components may be stacked plates each atleast partially defining an exterior of chamber 300.

As explained previously, chambers and components according to someembodiments of the present technology may be used to perform operationsin which a bias plasma may be formed in processing region 315. Thisoperation may include aspects of etching including a physicalbombardment of structures on a substrate, as well as a reactive etchperformed by reactive plasma effluents produced in processing region315. The precursors may include halogen precursors, which may beconfigured to remove material from a substrate. Accordingly, componentsof the chamber may be exposed to both chemically reactive plasmaeffluents, such as fluorine, chlorine, or other halogen-containingeffluents, as well as ions produced in the plasma, which may physicallyimpact materials and components.

Systems and chambers according to embodiments of the present technologymay also include configurations and coatings to limit plasma interactionwith components. For example, faceplate 330, which may be an additionalshowerhead, may conventionally have been exposed to both plasmaeffluents, such as bias plasma effluents contacting the surface facingthe substrate and within apertures, as well as reactive effluentsproceeding through apertures of the faceplate before interacting withsubstrate 312. Other components noted above may also be exposed to oneor both plasma effluents, including from backstreaming plasma effluents.

The plasma effluents may produce differing effects on the chambercomponents. For example, ions may be at least partially filtered frombackstreaming by showerhead 325 from the chemically reactive plasmaeffluents produced in processing region 315. However, the reactiveeffluents, such as chlorine-containing effluents, for example, may causecorrosion of exposed materials, such as by forming aluminum chloride.Over time, this process may corrode exposed metallic components,requiring replacement. Additionally, plasma species formed from a plasmain processing region 315 may have conventionally impacted componentscausing physical damage and sputtering that may erode components overtime. Accordingly, any of the described components may have beensusceptible to chemical corrosion as well as physical erosion fromplasma effluents produced within one or more regions of the chamber.

Corrosion may be controlled in some ways by forming a coating overmaterials. For example, while aluminum may corrode from exposure tochlorine-containing or fluorine-containing materials, aluminum oxide, orother platings or coatings, may not corrode on contact with theprecursors. Accordingly, any of the described components may be coatedor protected by anodization, oxidation, electroless nickel plating,aluminum oxide deposited coatings, barium titanate, or any othermaterial that may protect exposed conductive materials, such asaluminum, from chemical corrosion. Similarly, erosion may be controlledin some ways by forming a coating over materials. For example, highperformance materials such as e-beam or plasma spray yttrium oxide,which may or may not include additional materials including aluminum orzirconium, for example, may protect the component from physical damagecaused by plasma effluents. Damage to components may still occur,however, when a structure may be contacted by both corrosive plasmaeffluents as well as erosive plasma effluents.

Because chamber 300 may be configured to deliver halogen-containingprecursors through each of the lid stack components, any one or more ofthese components may be coated or protected with any of thecorrosion-resistant materials noted above. By limiting plasma generationto the processing region 315, fewer components may includeerosion-resistant coatings. Additionally, chamber 300 may includeshowerhead 325, which may be or include a dielectric material, such asquartz, for example, and which may protect faceplate 330 from erosiondue to ion bombardment. As will be explained below, apertures throughthe components may be configured together to limit or preventinteraction between plasma effluents and the faceplate 330.

FIG. 4 shows a schematic isometric view of an exemplary lid plate 205according to some embodiments of the present technology. Lid plate 205may provide a support structure for lid stacks as previously explained.As illustrated, lid plate 205 may provide a partially or substantiallyplanar component defining a first radial volume 405 and a second radialvolume 410, which may be laterally offset or separated from the firstradial volume 405. As illustrated above, the radial volume may at leastpartially define the plasma processing region radially, along withfaceplate 330 and/or showerhead 325 from above, and pedestal 310 or asubstrate support from below.

Lid plate 205 may support one or more of the components of the lid stackas noted above, and may support each of the tandem lid stacks as well asthe RF matches and associated components. Lid plate 205 may be aluminumin some embodiments, and may or may not include any of the corrosion orerosion-resistant coatings described above. For example, in someembodiments, lid plate 205 may be configured or include componentsconfigured to limit or prevent fluid or material contact with the lidplate during processing operations. Consequently, lid plate 205 may notinclude coatings in some embodiments. This may be advantageous in someconfigurations as coating a single-piece lid plate that may be almost ameter in length or more, may be impractical or impossible for somecoating systems.

FIG. 5 shows a schematic partial cross-sectional view of an exemplarylid stack 500 according to some embodiments of the present technology.The figure may illustrate an enhanced view of components identified inany of the previous figures, and may include any of the components,materials, or characteristics as previously described. The figure mayshow components of a portion of one of the processing chambers that maybe supported on lid plate 205, and it is to be understood that a secondlid stack or processing chamber may include any or all of the componentsillustrated as a second version of the component described, as well asin different configurations, such as rotated, for example. For example,lid stack 500 may illustrate a portion of lid plate 205, which maysupport the components. The supported components may include lid spacer320, liner 327, showerhead 325, faceplate 330, blocker plate 335, gasbox340, and cover plate 345. As noted above, these may each be firstcomponents in some embodiments, with a second set of each of thesecomponents, as well as any other described elsewhere, incorporated as asecond lid stack on lid plate 205. Some or all of these components maybe coupled together, such as with bolts, fasteners, screws, or otherelements that may compressibly join the components, which may increaseheat transfer through the lid stack as will be described below. Thecomponents may also include outlet manifold 350, which may receiveprecursors as will be described further below.

The processing system may further include a power supply and/or RF match215 electrically coupled with the processing chamber to provide electricpower to the faceplate 330, to generate a plasma in the processingregion 315 as previously described. Each component of the lid stack mayinclude an RF gasket or other electrical coupling component disposedbetween successive plates to maintain proper electrical coupling for theRF path. Several of the figures illustrate one or more channels formedin one or more surfaces of each component, which may be used to seat anRF gasket as well as elastomeric elements, such as o-rings, to provide aseal between adjacent system components. The power supply may beconfigured to deliver an adjustable amount of power to the chamberdepending on the process performed. Such a configuration may allow for atunable plasma to be used in the processes being performed. Unlike aremote plasma unit, which is often presented with on or offfunctionality, a tunable plasma may be configured to deliver a specificamount of power to the plasma processing region 315. This in turn mayallow development of particular plasma characteristics such thatprecursors may be dissociated in specific ways to enhance the etchingprofiles produced by these precursors.

In some embodiments, the plasma formed in substrate processing region315 may be used to produce the radical precursors from an inflow of, forexample, a chlorine-containing precursor or other precursor. An ACvoltage typically in the RF range may be applied between the conductivetop portion of the processing chamber, such as outlet manifold 350, andthrough the lid stack components to the faceplate 330 to ignite a plasmain processing region 315 during deposition. An RF power supply maygenerate a high RF frequency of 13.56 MHz but may also generate otherfrequencies alone or in combination with the 13.56 MHz frequency, aswell as any other frequencies up to 60 MHz or higher. The RF match maybe connected with the chamber via a conductive pin 510 providing voltageto the processing chamber. The conductive pin may reside in a dielectricinsulator and pin guide coupled with a surface of the outlet manifold350. As illustrated the RF match and conductive pin may be aligned witha central axis through the chamber or lid stack components, and may becoaxial in some embodiments, which may improve electrical delivery andproduce more uniform plasma.

The outlet manifold 350 may be seated on a first surface 342 of gasbox340, and may contact the first surface of gasbox 340 along a firstsurface 352 of the outlet manifold 350. Outlet manifold 350 may define acentral aperture 354 extending partially through the outlet manifoldfrom the first surface 352. The central aperture 354 may extendpartially or mostly through the outlet manifold, while not extending toor through a second surface 356 of the outlet manifold opposite thefirst surface 352. Second surface 356 may be electrically coupled withthe RF match 215, such as via conductive pin 510, and may be configuredto distribute RF power through the lid stack components. Outlet manifold350 may include one or more apertures 358 through a sidewall of thecentral aperture 354, which may provide fluid access to the centralaperture from a radial or exterior edge of the outlet manifold as willbe described below.

Central aperture 354 of outlet manifold 350 may provide fluid access togasbox 340, and a central aperture 344 of the gasbox. Gasbox 340 maydeliver fluids or precursors into a region defined by blocker plate 335.Blocker plate 335 may have a number of apertures defined through thecomponent to spread the precursors more uniformly outward within thechamber. For example, blocker plate 335 may define a number ofrelatively smaller apertures, which may produce a pressure drop acrossthe component and increase residence time of a precursor allowing morelateral or radial delivery before proceeding through the lid stack. Theblocker plate 335 may deliver the precursors to faceplate 330, which maydefine a plurality of first apertures as will be described below. Thefaceplate 330 may deliver the precursors to showerhead 325, which mayfurther distribute the precursors to processing region 315. Inprocessing region 315, a plasma may be generated from the precursors,which may produce ions that may contact internal components of thechamber. To reduce the interaction of plasma effluents with surfaces ofcomponents, such as lid spacer 320, lid plate 205, and faceplate 330, ashowerhead 325 and liner 327 may be included in some embodiments.

Lid spacer 320 may include a dielectric material, such as a ceramicmaterial for example, which may electrically isolate the lid stack fromthe lid plate and/or chamber body to facilitate plasma generation in theprocessing volume described above. To protect lid spacer 320, which mayextend into the radial volume defined by the lid plate, the lid spacermay support additional components. For example, lid spacer 320 may becharacterized by a first surface and a second surface, and may be seatedon the lid plate along the second surface of the spacer. As will beexplained below, lid spacer 320 may support the showerhead 325 and liner327 in some embodiments. Faceplate 330, as well as the overlying lidstack components, may be seated on the first surface of lid spacer 320,which may maintain electrical isolation of these components that may beoperating as a plasma-generating electrode in some embodiments.

FIG. 6 shows a schematic exploded isometric view of lid stack componentsaccording to some embodiments of the present technology. The figure mayinclude showerhead 325, liner 327, and lid spacer 320. As noted above,lid spacer 320 may support showerhead 325 and liner 327 to protect otherchamber components from contact or impact by plasma effluent species. Insome embodiments, showerhead 325 and liner 327 may be dielectricmaterials, such as quartz, for example, which may provide impactprotection for the other lid stack and chamber components, as well as beresistant to corrosion from the etchant species generated. Because ofthe material properties of quartz, in some embodiments the showerhead325 and the liner 327, may not directly contact other chambercomponents, and may be spaced and maintained indirectly coupled andseated within the lid stack.

Showerhead 325 may define a plurality of apertures, which may be secondapertures as will be described below. Showerhead 325 may also define oneor more notches 602 on or about a radial outer edge of showerhead 325.The notches 602 may be sized to accept an alignment pin as will bedescribed below. Liner 327 may be an annular liner as illustrated, andmay be characterized by a first surface 604 that may be facingshowerhead 325. Liner 327 may also be characterized by a second surface606 opposite the first, and which may extend within the processingregion in a direction from the faceplate to the pedestal at least to orbeyond an edge of the lid spacer 320. This may ensure protection of thelid spacer during processing operations.

As illustrated, liner 327 may define a protrusion 610 extending about anexterior surface of the annular liner. This protrusion may facilitateseating of both the liner and the showerhead in some embodiments.Protrusion 610 may be an integral portion of liner 327, which may be amonolithic or single-piece component. The protrusion 610 may be recessedfrom first surface 604 of liner 327. This may provide a first ledge 612,such as on a first surface of protrusion 610, facing the first surfaceof the annular liner, and a second ledge 614, such as on a secondsurface of protrusion 610 opposite the first surface, facing the secondsurface of the liner. In some embodiments a first elastomeric element616 may be positioned on, and extend about, first ledge 612. A secondelastomeric element 618 may be positioned on, and extend about, secondledge 614. The first elastomeric element 616 and the second elastomericelement 618 may or may not be pressure sealing components duringprocessing within the chamber. The elastomeric elements may additionallyor instead ensure the showerhead 325 and liner 327 may have limitedcontact with other components.

FIG. 7 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology, and may show adetailed view of showerhead 325 and liner 327 incorporated within thelid stack. As illustrated, lid spacer 320 may include a first surface702 and a second surface 704 opposite the first surface. The lid spacer320 may seat on the lid plate 205 along the second surface 704, whilethe faceplate and other lid stack components may sit about the firstsurface 702 of the lid spacer. Lid spacer 320 may additionally define aportion extending vertically within the radial volume defined by the lidplate as previously described. The lid spacer 320 may define a firstrecessed ledge 706 along this portion. As previously described,showerhead 325 and liner 327 may be dielectric materials, such asquartz, in some embodiments. Quartz may crack when in contact with othercomponents during processing conditions, and thus, in some embodimentsthe components may not directly contact other components of the lidstack.

As previously discussed, a first elastomeric element 616 and a secondelastomeric element 618 may extend on surfaces of protrusion 610 andextend about the annular liner. The elastomeric elements may be bumperrings, for example, which may allow the liner and showerhead to beseated on other components. For example, liner 327 may rest on firstrecessed ledge 706 of lid spacer 320 along second elastomeric element618. The first recessed ledge 706 may extend radially about theprocessing region volume, and may be in contact with the elastomericelement 618 along the ledge. In some embodiments a radially outer edgeof liner 327 may contact lid spacer 320. In some embodiments, either orboth of first elastomeric element 616 or second elastomeric element 618may extend proud of protrusion 610, and may extend radially outward froma radially outer edge of the protrusion 610 to limit or prevent contactbetween the protrusion 610 and the lid spacer 320. First elastomericelement 616 may also extend proud of liner 327, and may extendvertically beyond a first surface 604 of liner 327. Accordingly,showerhead 325 may sit on first elastomeric element 616, and may havelimited contact with liner 327, and in some embodiments may not contactliner 327.

Lid spacer 320 may also define a second recessed ledge 708 radiallyoutward from first recessed ledge 706. Second recessed ledge 708 mayrecess from the first surface 702 of lid spacer 320, and first recessedledge 706 may recess from the first surface 702 and the second recessedledge 708. The extent of recess of first recessed ledge 706 from secondrecessed ledge 708 may be greater than a thickness of protrusion 610 ofthe liner 327, such as a distance between first ledge 612 and secondledge 614 of the protrusion. The extent of recess may, however, be lessthan a distance including a diameter of each elastomeric element.Consequently, an entire distance extending from second elastomericelement 618, protrusion 610, and first elastomeric element 616 may begreater than a distance of first recessed ledge 706 from second recessedledge 708. This may allow showerhead 325 to be seated slightly abovesecond recessed ledge 708, and may limit or prevent contact between aradial edge of showerhead 325 and an exposed surface of lid spacer 320.Second recessed ledge 708 may be characterized by a distance that is atleast slightly greater than a thickness of showerhead 325.

As a faceplate as previously described may be seated on first surface702 of lid spacer 320, a gap may be maintained between the faceplate andshowerhead 325. To maintain the gap, second recessed ledge 708 may becharacterized by a distance of recess from first surface 702 greaterthan a thickness of the showerhead 325 as well as a distance by whichfirst elastomeric element 616 extends beyond second recessed ledge 708.Consequently, showerhead 325 may be maintained recessed below anuppermost portion of first surface 702 of lid spacer 320 on which afaceplate or lid stack components may be seated. This may then maintaina gap between the showerhead and the faceplate as will be describedfurther below.

To limit movement of showerhead 325, and to maintain alignment duringsuccessive placements, showerhead 325 may define a plurality of notches602 as previously described. Notches 602 may extend radially inward froman external radial edge of showerhead 325. A plurality of notches 710may be formed along a radial sidewall at least partially defining secondrecessed ledge 708 of lid spacer 320, which may be companion notches foreach notch 602 on the showerhead 325. Accordingly, in some embodimentsthe number of notches 602 and the number of notches 710 may be similar.

A plurality of alignment pins 712 may be seated in each of the notchsets to maintain alignment of the showerhead. Each alignment pin 712 mayextend through a channel defined between each set of notch 602 and notch710 about the showerhead. The alignment pins may be a materialconfigured to limit damage to showerhead 325, and may be a polyimidematerial such as vespel, or may be teflon, PEEK, or some other materialthat may limit or prevent contact between the showerhead and any hardmaterials that might contribute to cracking or damage. The alignmentpins 712 may be seated on second recessed ledge 708. Accordingly,although liner 327 may be contacted by elastomeric elements 616 and 618,and although showerhead 325 may be contacted by first elastomericelement 616 and/or alignment pins 712, the showerhead 325 and the liner327 may be maintained separate from and may not contact lid spacer 320,an associated faceplate as previously described, lid plate 205, or anyother component of the processing system in some embodiments.

During maintenance operations or tear down, the lid stack may be removedfrom the lid plate for accessing each lid stack plate for inspection orremoval, such as for cleaning. Removal of the lid spacer 320, showerhead325, and liner 327 may be performed with care to limit damage topotentially fragile components. As previously noted, lid spacer 320 maybe a ceramic material, such as aluminum oxide, aluminum nitride, or anyother ceramic or dielectric material. Forming threads, such as forscrews or bolts or other jack members, may therefore be challengingwithout cracking or damaging the material. Accordingly, in someembodiments jack members may be incorporated with the lid plate to liftthe lid spacer and from the lid plate.

As shown in FIG. 7 , lid plate 205 may define one or more apertures 714at least partially extending from a first surface of the lid plate onwhich the lid spacer 320 may be seated. The aperture or apertures 714may at least partially extend through the lid plate 205 from the firstsurface, and in some embodiments may be threaded to support a jackmember 716. The apertures 714 may be characterized by any profile,including a counterbore or countersink profile as illustrated, althoughstraight apertures and other profiles are similarly encompassed. Anassociated aperture 718 may be defined through lid spacer 320, and mayfully extend from first surface 702 through second surface 704 of thelid spacer. As lid spacer 320 may be ceramic in some embodiments,aperture or apertures 718 may not be threaded, and may contain noadditional components within the aperture, although the apertures mayprovide at least partial access to aperture or apertures 714, as well asjack members 716. Each aperture 718 may be axially aligned with anassociated aperture 714 and/or jack member 716 of the lid plate 205.

In some embodiments the apertures 718 of the spacer may be characterizedby a diameter that may be less than or about the diameter of theapertures 714 through the lid plate 205. Apertures 718 and apertures 714may be characterized by a number of profiles, although the diameter ofaperture 718 at least at second surface 704 may be less than thediameter of apertures 714 at the first surface of lid plate 205. Forexample, a head or at least a surface of jack member 716 and anassociated portion of aperture 714, such as is illustrated, may becharacterized by a larger diameter than a diameter of apertures 718 atsecond surface 704 of lid spacer 320. Consequently, jack members 716 maybe accessed through apertures 718 of the lid spacer, and operation ofthe jack members, such as by rotation from a direction of threading ofapertures 714, may draw the jack members from the apertures 714, whichmay lift or separate lid spacer 320 from the lid plate 205. Asshowerhead 325 and liner 327 may be seated on or with lid spacer 320,removal of the lid spacer may also remove these components.

Turning to FIGS. 8A-8B are shown schematic plan views of components withprojections according to some embodiments of the present technology.FIG. 8A illustrates a top view of a portion of a faceplate according tosome embodiments of the present technology. The faceplate may define aplurality of first apertures 805, which may be characterized by a numberof profiles including a counterbore profile as shown, in which adiameter at a first surface, such as a surface facing a blocker plate orother lid stack component, may be larger than a diameter at a secondsurface opposite the first surface, such as a surface facing ashowerhead or pedestal, or defining the processing region from above.Also shown is a projection of apertures 807, which may exist through ashowerhead positioned proximate the second surface of the faceplate. Theprojection is included to illustrate that apertures through theshowerhead may not overlap with apertures of the faceplate in someembodiments. Similarly, FIG. 8B illustrates a portion of a showerhead,such as a first surface, which may be facing a faceplate, and which mayinclude any of the materials or characteristics of any showerheaddescribed elsewhere. The showerhead may define a plurality of secondapertures 810, which may be characterized by any number of profiles aswill be described further below. In some embodiments, the plurality ofsecond apertures 810 may include a greater number of apertures than theplurality of first apertures 805. Also shown is a projection ofapertures 812, which may exist through a faceplate positioned proximatethe first surface of the showerhead. Again, the projection mayillustrate examples in which the apertures through the faceplate may notoverlap or align with apertures of the showerhead in some embodiments.

The plurality of first apertures 805 of the faceplate may becharacterized by a first pattern as shown. Any of a variety of patternsof first apertures may be similarly encompassed by the presenttechnology including a different number of apertures per ring, differentgeometric patterns of apertures including more random patterns, or otheraperture configurations. The plurality of second apertures 810 of theshowerhead may be characterized by a second pattern as shown, which mayalso include any of a variety of aperture patterns. In some embodiments,the second pattern may be at least in part based on the first pattern.

For example, in some embodiments the second pattern may include one ormore adjustments from the first pattern. The second pattern may includeone, two, or more sets of apertures characterized by the first pattern,where each aperture of the plurality of second apertures may be offsetfrom each aperture of the plurality of first apertures. As onenon-limiting example, FIG. 8 illustrates aperture patterns in which thefirst pattern and number of apertures is incorporated twice to producethe second pattern of apertures, as two subsets of the plurality ofsecond apertures, where the plurality of second apertures is twice thenumber of apertures as the plurality of first apertures. A first subsetof the plurality of second apertures may be characterized by a patternlike the first aperture pattern that has been offset from the firstpattern in a first way. Additionally, a second subset of the pluralityof second apertures may be characterized by a pattern like the firstaperture pattern that has been offset from the first pattern in a secondway. Thus, the first subset of second apertures and the second subset ofsecond apertures may each include the same number of apertures as theplurality of first apertures.

For example, the first subset of apertures of the plurality of secondapertures may include the first aperture pattern after an angularoffset. Thus, each aperture of the first subset of apertures of theplurality of second apertures may pair with an aperture of the firstapertures, and be offset from that associated aperture along an angle ineither direction from a central axis through the showerhead. In theillustrations, aperture 814, or alternatively aperture 815, on theshowerhead and aperture 816 on the faceplate may be the same aperture ofthe two patterns, where the angular offset has been applied to the firstsubset of apertures of the plurality of second apertures that includesaperture 814. By applying this angular offset, the plurality of secondapertures may include a first subset of apertures that may mimic thefirst pattern of apertures rotated an amount about a central axisthrough the components.

Similarly, the second subset of apertures of the plurality of secondapertures may include the first apertures pattern after a radial offset.Thus, each aperture of the second subset of apertures of the pluralityof second apertures may pair with an aperture of the first apertures,and be offset from that associated aperture along a radius in eitherdirection from a central axis through the showerhead. In theillustrations, aperture 818 on the showerhead and aperture 820 on thefaceplate may be the same aperture of the two patterns, where the radialoffset has been applied to the second subset of apertures of theplurality of apertures that includes aperture 818. By applying thisradial offset, the plurality of second apertures may include a secondsubset of apertures that may mimic the first pattern of apertures inwardor outward an amount along corresponding radii from the central axisthrough the components.

FIG. 9 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology. The figure mayprovide a schematic representation of a faceplate 905 and a showerhead910 according to some embodiments of the present technology. Thefaceplate 905 and showerhead 910 may be incorporated with a lid plateand lid stack as previously described. Faceplate 905 may include any ofthe features or characteristics of faceplates as described elsewhere.Additionally, showerhead 910 may include any of the features orcharacteristics of showerheads as described elsewhere.

The exemplary faceplate 905 includes a first pattern of first apertures908 as discussed previously. The first apertures may be characterized byany number of profiles, including a counterbore as illustrated andextending from a first surface 906 to a second surface 907 of thefaceplate. Showerhead 910 may include a number of different aperturepatterns that may constitute a second pattern as discussed previously,and which may include a first subset and a second subset of apertures914. As shown, showerhead 910 may define apertures 914 that are offsetfrom some or all apertures 908 of faceplate 905. The apertures 914 mayextend from first surface 911 to second surface 912, although the outletof apertures 914 at second surface 912 may not align with an inlet ofapertures 914 in some embodiments. In some embodiments, each aperture914 may be offset from each aperture 908 of the faceplate, although theoffset may occur at first surface 911 or second surface 912, as well ascompletely across the aperture from first surface 911 to second surface912.

As discussed previously, showerhead 910 may be positioned within theprocessing region between faceplate 905 and a pedestal, which togethermay operate to generate plasma within the processing region. Showerhead910 may be configured to limit ionic bombardment on the second surface907 of faceplate 905, and may be or include a material, such as quartz,that may be more resistant to ionic bombardment. When plasma isproduced, much ionic transmission may occur in a relatively lineardirection parallel to a central axis through the chamber components.Consequently, by incorporating an aperture profile through showerhead910 that may limit a linear path through the apertures 914 of theshowerhead in a direction orthogonal to the second surface 912 ofshowerhead 910, ions are likely to impinge on a surface of the aperture,and may not pass through to first surface 911 of showerhead 910 or tothe faceplate 905 disposed beyond.

Any number of aperture profiles may be utilized in embodiments of thepresent technology, and apertures 914 a-914 e may be only a few possibleexamples of aperture patterns encompassed by the present technology, andwhich may be selected or combined with other aperture profiles. Forexample, aperture 914 a may be characterized by an angular path fromfirst surface 911 to second surface 912, where the outlet at secondsurface 912 may be laterally offset from the inlet at first surface 911to limit or prevent a linear path through the aperture. Apertures may becharacterized by a number of angles, including angles extending indifferent directions through the showerhead or to different extents fromother apertures, which may facilitate delivery into a processing regionor improve uniformity.

Apertures 914 b, and similar apertures 914 e, may include a partiallylinear path through the aperture either from first surface 911 or tosecond surface 912, while incorporating a partially angled portionextending to one surface, which may similarly limit a direct linear paththrough the aperture. Again, the apertures may be combined amongst theplurality of second apertures, and may be characterized by angledportions extending in a variety of directions relative to otherapertures. Aperture 914 c may be characterized by a profile includingtwo angled sections, which may or may not include an aligned inlet andoutlet of the aperture as illustrated. However, the extent of the anglemay be such that a direct linear path through the aperture may belimited or prevented. Aperture 914 c may similarly be combined with anyother aperture designs, and again may include multiple apertures havingsimilar or different angled profiles from one another.

Aperture 914 d may illustrate a more complex aperture profile in whichtwo vertical portions extending from each of the first surface 911 andthe second surface 912 may be offset laterally from one another, andjoined with an angled portion of the aperture, which may be angled tolimit or prevent a direct linear path through the aperture. Again, anynumber of different angles may be utilized among apertures through theshowerhead, and any of the exemplary configurations may be used alone orin combination to produce an aperture pattern that may affect fluid flowin any number of ways, while limiting or preventing ion impingement onthe second surface 907 of faceplate 905.

As discussed above, showerhead 910 may be spaced apart from faceplate905 a distance D, which may occur from a configuration of an associatedlid spacer and elastomeric elements, for example. The distance D may beminimized in some embodiments. For example, because in some embodimentsfaceplate 905 may be operated as a plasma-generating electrode toproduce plasma in a processing region between the faceplate and thepedestal, plasma may be generated completely between the faceplate andthe pedestal. However, if plasma may be generated between the showerheadand the faceplate, the showerhead will not prevent ionic bombardment onthe second surface 907 of the faceplate. Additionally, contact betweenthe showerhead and the faceplate may cause damage or fracture of thequartz showerhead.

Accordingly, in some embodiments a distance D between the showerhead andthe faceplate may be limited to a distance to limit or prevent plasmageneration between the components during operation, such as to control amean-free path length before collision with the two components, whichmay prevent ionization. For example, in some embodiments, the showerhead910 may be separated from the faceplate by 2 mm or less in order toprevent plasma generation, and may be separated from the faceplate byless than or about 1.8 mm, less than or about 1.6 mm, less than or about1.4 mm, less than or about 1.2 mm, less than or about 1.0 mm, less thanor about 0.9 mm, less than or about 0.8 mm, less than or about 0.7 mm,less than or about 0.6 mm, less than or about 0.5 mm, less than or about0.4 mm, less than or about 0.3 mm, less than or about 0.2 mm, or less,although a gap may be maintained between the two components to limit orprevent physical contact between the components, and minimize a pressuredrop within the gap between the two components.

Turning to FIG. 10 is shown a schematic a top isometric view ofcomponents according to some embodiments of the present technology. Thefigure may illustrate a portion of a lid plate 205 and a lid stack 210,which may be similar to lid stack 210 a as discussed above. It is to beunderstood that the figure includes only a partial view, and the systemmay additionally include any of the components discussed elsewhere forsemiconductor processing systems according to embodiments of the presenttechnology. For example, lid plate 205 may define a second volume overwhich a second lid stack may be disposed, and which may include anycomponent or any feature of any component described throughout thepresent disclosure, including with a variety of modifications, such ascomponent rotation, for example.

The figure may illustrate a portion of a lid stack with the RF match andassociated components removed, as well as with removal of the coverplate over the gasbox 340 shown. Beneath the gasbox 340 may beadditional lid stack components including any of the componentspreviously described. The figure may show a view of the first surface342 of the gasbox including an inlet to central aperture 344 through thegasbox. Gasbox 340 may additionally define a first channel 1010 withinthe first surface of the gasbox. First channel 1010 may be characterizedby a number of profiles, including a spiral or wound profile asillustrated. Disposed within the first channel 1010 may be a heater1015. As illustrated, heater 1015 may extend through a cover plate andbe wound within the first channel 1010. First channel 1010 may extendfurther than heater 1015, which may accommodate expansion of heater 1015during operation.

Heater 1015 may be configured to heat lid stack 210 in embodiments, andmay conductively heat each lid stack component. Heater 1015 may be anykind of heater including a cable heater, or other device configured todeliver heat conductively to gasbox 340, which may in turn heat eachother lid stack component. In some embodiments, heater 1015 may be orinclude an electrical heater formed in a pattern defined by the firstchannel 1010 across the gasbox 340, and around central aperture 344 aswell as an outlet manifold as previously described. The heater may be aresistive element heater that may be configured to provide up to, about,or greater than about 2,000 W of heat, and may be configured to providegreater than or about 2,500 W, greater than or about 3,000 W, greaterthan or about 3,500 W, greater than or about 4,000 W, greater than orabout 4,500 W, greater than or about 5,000 W, or more.

Heater 1015 may be configured to produce a variable chamber componenttemperature up to, about, or greater than about 50° C., and may beconfigured to produce a chamber component temperature greater than orabout 75° C., greater than or about 100° C., greater than or about 150°C., greater than or about 200° C., greater than or about 250° C.,greater than or about 300° C., greater than or about 350° C., greaterthan or about 400° C., greater than or about 450° C., greater than orabout 500° C., greater than or about 550° C., greater than or about 600°C., or higher in embodiments. Heater 1015 may be configured to raiseindividual components, such as the faceplate, to any of thesetemperatures to facilitate processing operations. In some processingoperations, heater 1015 may be adjusted to conductively raise thetemperature of the substrate to any particular temperature noted above,or within any range of temperatures within or between any of the statedtemperatures. To maintain temperature uniformity across the gasbox 340,in some embodiments the heater may be wound within the first channel1010 for an integral number of turns. For example, as illustrated,heater 1015 extends to a position on a radial outer turn that issubstantially, or in some embodiments directly, in line with a positionof the heater at the entrance or at an innermost radial turn.Accordingly, each area of the gasbox 340 is in contact with a similararea or amount of heater 1015, which may improve temperature uniformityin some embodiments. An inlet may be formed through an overlying coverplate, which may allow the heater to be electrically coupled with anassociated RF filter, as illustrated previously, such as with FIG. 5 .

Gasbox 340 may additionally define a second channel 1020 within firstsurface 342 of the gasbox. Second channel 1020 may be radially inward offirst channel 1010 in some embodiments. Gasbox 340 may additionallydefine a third channel 1025 within first surface 342 of the gasbox.Third channel 1025 may be radially outward of first channel 1010 in someembodiments. While first channel 1010 may be incorporated to seat aheater as noted, second channel 1020 and third channel 1025 may beincluded to seal a cover plate about the gasbox.

FIG. 11 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology, and mayillustrate a partial cross-section of a gasbox and cover plate accordingto some embodiments of the present technology. The figure is intendedonly to provide additional details of particular components, which maybe incorporated in any chamber or system described elsewhere, and whichmay include any aspect of components or systems described elsewhere. Asillustrated, gasbox 340 may be characterized by a first surface 342 anda second surface 343 opposite the first. Within first surface 342 may bedefined a first channel 1010, within which heater 1015 may be disposed,as well as a second channel 1020, and a third channel 1025. Asillustrated, in some embodiments second channel 1020 may be locatedradially inward of first channel 1010, and third channel 1025 may belocated radially outward of first channel 1010.

A first gasket 1110 or elastomeric element may be disposed within secondchannel 1020, and a second gasket 1115 or elastomeric element may bedisposed within the third channel 1025. Cover plate 345 may be seated atleast partially across first surface 342 of gasbox 340, and may extendat least across first channel 1010, second channel 1020, and thirdchannel 1025. Cover plate 345 may not extend fully radially inward, toprovide access for an outlet manifold to be positioned on or in contactwith the first surface 342 of the gasbox. The depth of first channel1010 relative to the thickness of heater 1015 may be configured toreduce, limit, or prevent contact between heater 1015 and cover plate345. Cover plate 345 may contact first gasket 1110 and second gasket1115, and may form a seal between the two gaskets in some embodiments.By sealing across the first channel 1010, and the heater seated withinthe first channel 1010, cleaning operations may be performed lessfrequently of the first channel and the heater in some embodiments.

As noted above, gasbox 340 may be characterized by a first surface 342and a second surface 343 opposite the first surface. A central aperture344 may extend from first surface 342 to second surface 343, which mayprovide fluid access to the other lid stack components and into theprocessing region of the chamber. To facilitate fluid distribution,central aperture 344 may be characterized by a flare 1120 or bevel at anoutlet of the central channel extending to second surface 343 of thegasbox. Additionally, gasbox 340 may define a recessed ledge 1125 fromthe first surface 342 into the central aperture 344. An insert may beseated on recessed ledge 1125 in some embodiments, which may be used todirect or adjust fluid flow into the processing chamber.

FIGS. 12A-12D show schematic views of exemplary distributer inserts 1200according to some embodiments of the present technology. Inserts 1200may be seated on recessed ledge 1125, and be used to increase mixing, oradjust fluid flow. For example, multiple precursors may be flowed intoan outlet manifold overlying the gasbox. To increase mixing, an insertmay reduce the aperture size or include multiple apertures providingaccess through the central aperture of the gasbox, which may facilitatemixing of the precursors as the precursors enter the processing chamber.For example, as illustrated in FIG. 12A, insert 1200 a may include asingle aperture 1205 a, which may increase residence time and mixingprior to delivery through the gasbox. Similarly, as illustrated in FIG.12B, insert 1200 b may include multiple apertures 1205 b, which may alsoaffect residence time and flow. Any number of aperture configurationsmay be utilized in this way.

Additionally, apertures may extend through an insert in any number ofways to further adjust fluid flow or mixing. For example, as illustratedin FIG. 12C, one or more apertures 1205 c, which may be associated withany aperture configuration including one or more apertures, may becharacterized by a substantially vertical profile through the insert.Additionally, as illustrated in FIG. 12D, one or more apertures 1205 dmay be characterized by an angle extending through the insert, which maymodify fluid flow, such as by causing an amount of swirl to precursorsdelivered into the processing chamber, which may further mix thematerials. In embodiments the insert 1200 may be coated with any of thematerials as previously described.

FIG. 13 shows a schematic partial isometric view of components accordingto some embodiments of the present technology. The figure may show apartial reversed view of systems and components previously described,which may illustrate additional system details. FIG. 13 illustrates asemiconductor processing system 1300, which may include any component,characteristic, or material previously described. For example, system1300 may include a lid plate 205, which may be coupled with a chamberbody 305. Chamber body 305 may include pedestals, which may be raised toengage a substrate within the processing region defined by lid stackcomponents and the lid plate 205 as previously described. On lid plate205 may be a first lid stack 210 a and a second lid stack 210 b, whichmay include any of the components and configurations describedpreviously.

For example, lid stack 210 a may include a first outlet manifold 350 a,and lid stack 210 b may include a second outlet manifold 350 b, whichmay each be coupled with a respective RF match as previously described.As described above, outlet manifolds 350 may include a central apertureproviding access to the respective lid stack through the gasbox, and mayinclude one or more additional apertures extending to the centralaperture from a radially exterior surface of the outlet manifold. Insome embodiments, outlet manifold 350 a and outlet manifold 350 b may besimilar or identical, although the components may be reversed from oneanother to provide access to the additional apertures from a centrallocation on the lid plate 205. Precursors used in processing may bedelivered through the lid plate 205, and may be piped and split to thetwo processing chambers or lid stacks.

Each outlet manifold may include a gas block coupling the associatedprecursor piping with each outlet manifold. For example, the system 1300may include a first gas block 1310 a coupled with an exterior edge ofthe first outlet manifold 350 a. The first gas block may provide fluidcommunication with the central aperture of the outlet manifold throughthe additional one or more apertures extending laterally or radiallyfrom an exterior surface to the central aperture. System 1300 may alsoinclude a second gas block 1310 b coupled with an exterior edge orsurface of the second outlet manifold 350 b. The second gas block mayprovide fluid communication with the central aperture of the outletmanifold through the additional one or more apertures extendinglaterally or radially from an exterior surface to the central aperture.

Although each outlet manifold 350 may be illustrated as beingsubstantially cylindrical, a surface through which the additionalapertures may be accessed, and with which gas block 1310 may be coupled,may be at least partially planarized or flattened to facilitate couplingof the components and limit leaks. The gas blocks may receive pipingfrom one or more precursor sources, such as two precursor sources asillustrated. The precursors may be separately piped to the gas blocks,and may extend through the lid plate 205 with feedthroughs 1315, whichwill be described further below.

FIG. 13 additionally illustrates an aspect of coupling between the lidplate 205 and the chamber body 305 according to some embodiments of thepresent technology. For example, in some embodiments, lid plate 205, aswell as the lid stacks, RF components, and associated piping supportedby the lid plate 205, may be coupled with chamber body 305 about hinges1320. Hinges 1320 may include leafs coupled with a first surface of lidplate 205, and may provide pins extending outward from the lid plate.Chamber body 305 may include knuckles, bearings, or receptacles that mayreceive the pins and may allow the lid plate to hinge about the chamberbody, providing access to the interior of the processing region forsubstrate delivery and removal, inspection and cleaning, or othermaintenance.

FIG. 14 shows a schematic partial cross-sectional view of componentsaccording to some embodiments of the present technology, and mayillustrate a cross-section through lid plate 205 and through afeedthrough 1315 as previously described. Lid plate 205 may define oneor more apertures through the lid plate, and through which processingprecursors may be delivered. Because processing chambers may delivercorrosive or reactive precursors, components or piping through thesystem may include coatings to protect the materials from damage. Lidplate 205 may be a single-piece design in some embodiments, and mayextend up to a meter or more in length, which may challenge coatingchambers. Accordingly, some embodiments of the present technology maylimit interaction between precursors and lid plate 205, such as with lidspacers and liners as previously described to protect interior surfaces,and by utilizing feedthroughs as illustrated.

Apertures 1405 extending through lid plate 205 may be sized toaccommodate a feedthrough which may provide a channel for deliveringprecursors through the lid plate. The feedthroughs may be or includecorrosion resistant materials, which may protect against damage fromprecursors being delivered, such as chlorine or fluorine-containingprecursors. The materials may include any of the coatings or materialspreviously described, and may also include other corrosion resistantmaterials, such as steel, nickel, alloys, or other metals or materialsthat may be resistant to corrosion. The feedthroughs may extend throughthe lid plate completely, and may be piped with a split or otherwisecoupled with each of the first gas block and second gas block aspreviously described. Depending on the number of precursors, multiplefeedthroughs may extend through the lid plate and be coupled with eachgas block, including the two feedthroughs and associated pipingillustrated previously. The feedthroughs may be positioned through thelid plate and set with a jam nut and washers, such as belleville washersas illustrated, which may allow adjustable sealing of the feedthroughwith a base plate sealing the feedthrough with the lid plate.

As previously explained, lid plate 205 may be hingedly coupled with thechamber body 305, which may separate feedthroughs 1315 from anassociated piping path, although in some embodiments flexible and orretractable piping solutions may be incorporated. In some embodiments,feedthroughs 1315 may land on elastomeric elements 1410, such aso-rings, which may provide a sealing surface to receive feedthroughswhen the lid plate is engaged with the chamber body. The gasfeedthroughs may seat on the elastomeric elements 1410 when the lidplate is closed upon the chamber body, which may provide a seal betweenthe components. By utilizing chamber systems and components according toembodiments of the present technology, component degradation and flakingmay be reduced, and improved plasma processing may be afforded.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a plate” includes aplurality of such layers, and reference to “the precursor” includesreference to one or more precursors and equivalents thereof known tothose skilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

The invention claimed is:
 1. A semiconductor processing systemcomprising: a pedestal configured to support a semiconductor substrate,the pedestal operable as a first plasma-generating electrode; a lidplate defining a radial volume; a faceplate supported with the lidplate, the faceplate operable as a second plasma-generating electrode,wherein a plasma processing region is defined between the pedestal andthe faceplate within the radial volume defined by the lid plate, andwherein the faceplate defines a plurality of first apertures; ashowerhead positioned between the faceplate and the pedestal, whereinthe showerhead defines a plurality of second apertures comprising agreater number of apertures than the plurality of first apertures; anannular liner positioned within the radial volume defined by the lidplate, wherein the annular liner is characterized by a first surfacefacing the showerhead and a second surface opposite the first surface,wherein: the annular liner defines a protrusion extending about anexterior surface of the annular liner; and the protrusion is recessedfrom the first surface of the annular liner and defines a first ledgefacing the first surface of the annular liner and a second ledge facingthe second surface of the annular liner.
 2. The semiconductor processingsystem of claim 1, wherein the showerhead comprises a dielectricmaterial.
 3. The semiconductor processing system of claim 1, wherein theshowerhead defines at least twice as many apertures as the faceplate. 4.The semiconductor processing system of claim 1, wherein each aperture ofthe plurality of second apertures is offset from each aperture of theplurality of first apertures.
 5. The semiconductor processing system ofclaim 4, wherein a first subset of apertures of the plurality of secondapertures is characterized by a similar aperture pattern as theplurality of first apertures, and wherein each aperture of the firstsubset of apertures is offset from an associated aperture of theplurality of first apertures along an angle from a central axis throughthe showerhead.
 6. The semiconductor processing system of claim 4,wherein a second subset of apertures of the plurality of secondapertures is characterized by a similar aperture pattern as theplurality of first apertures, and wherein each aperture of the secondsubset of apertures is offset from an associated aperture of theplurality of first apertures along a radius from a central axis throughthe showerhead.
 7. The semiconductor processing system of claim 1,further comprising: a first elastomeric element extending about thefirst ledge, wherein the first elastomeric element extends proud of thefirst surface of the annular liner, and wherein the showerhead is seatedon the first elastomeric element; and a second elastomeric elementextending about the second ledge.
 8. The semiconductor processing systemof claim 7, further comprising a spacer seated on the lid plate, thespacer defining a first recessed ledge, wherein the second elastomericelement is seated on the first recessed ledge of the spacer, and whereinthe spacer defines a second recessed ledge radially outward of the firstrecessed ledge.
 9. The semiconductor processing system of claim 8,wherein the showerhead defines a plurality of notches about an exterioredge of the showerhead, wherein the semiconductor processing systemfurther comprises: a plurality of alignment pins, each alignment pin ofthe plurality of alignment pins at least partially disposed within anotch of the plurality of notches, wherein each alignment pin of theplurality of alignment pins is seated on the second recessed ledge ofthe spacer.
 10. A semiconductor processing system comprising: a lidplate at least partially defining a radial volume for plasma processing;a spacer seated on the lid plate and at least partially extending withinthe radial volume, the spacer characterized by a first surface and asecond surface opposite the first surface, the spacer seated on the lidplate along the second surface of the spacer; a faceplate seated on thefirst surface of the spacer and at least partially defining the radialvolume from above, the faceplate defining a plurality of firstapertures; a gasbox, wherein the faceplate is disposed between thegasbox and the spacer, wherein the gasbox defines a central aperture,and wherein the gasbox defines a first channel within a first surface ofthe gasbox; and a heater disposed within the first channel; an annularliner positioned within the radial volume defined by the lid plate,wherein the annular liner is characterized by a first surface and asecond surface opposite the first surface and that faces the faceplate,wherein: the annular liner defines a protrusion extending about anexterior surface of the annular liner; and the protrusion is recessedfrom the first surface of the annular liner and defines a first ledgefacing the first surface of the annular liner and a second ledge facingthe second surface of the annular liner.
 11. The semiconductorprocessing system of claim 10, further comprising a cover plateextending across the first channel defined within the first surface ofthe gasbox.
 12. The semiconductor processing system of claim 11, whereinthe gasbox further defines: a second channel within the first surface ofthe gasbox radially inward of the first channel, and a third channelwithin the first surface of the gasbox radially outward of the firstchannel, wherein the semiconductor processing system further comprises:a first gasket disposed within the second channel within the firstsurface of the gasbox, and a second gasket disposed within the thirdchannel within the first surface of the gasbox, wherein the cover plateforms a seal between the first gasket and the second gasket.
 13. Asemiconductor processing system comprising: a lid plate defining a firstradial volume and a second radial volume laterally separated along thelid plate from the first radial volume; a first lid stack seated on thelid plate and axially aligned with the first radial volume; a first RFmatch, wherein the first lid stack is disposed between the lid plate andthe first RF match; a second lid stack seated on the lid plate andaxially aligned with the second radial volume, wherein the first lidstack comprises a first gasbox defining a central aperture, and whereinthe second lid stack comprises a second gasbox defining a centralaperture; a first outlet manifold positioned on the first gasbox along afirst surface of the first outlet manifold, wherein the first outletmanifold defines a central aperture extending partially through thefirst outlet manifold from the first surface of the first outletmanifold towards a second surface of the first outlet manifold oppositethe first surface of the first outlet manifold, wherein the centralaperture of the first outlet manifold provides fluid access to thecentral aperture of the first gasbox; a first conductive pinelectrically coupling the first RF match with the first outlet manifold;a second outlet manifold positioned on the second gasbox along a firstsurface of the second outlet manifold, wherein the second outletmanifold defines a central aperture extending partially through thesecond outlet manifold from the first surface of the second outletmanifold towards a second surface of the second outlet manifold oppositethe first surface of the first outlet manifold, wherein the centralaperture of the second outlet manifold provides fluid access to thecentral aperture of the second gasbox; a second RF match, wherein thesecond lid stack is disposed between the lid plate and the second RFmatch; and a second conductive pin electrically coupling the second RFmatch with the second outlet manifold.
 14. The semiconductor processingsystem of claim 13, wherein the first gasbox and the second gasbox eachdefine a first channel within a first surface of a respective gasbox onwhich a respective outlet manifold is positioned, wherein each firstchannel is characterized by a spiral profile within the first surface ofthe respective gasbox.
 15. The semiconductor processing system of claim14, further comprising: a first heater extending through the firstchannel of the first gasbox, a first RF filter coupled with the firstheater, a second heater extending through the first channel of thesecond gasbox, and a second RF filter coupled with the second heater.16. The semiconductor processing system of claim 13, further comprising:a first gas block coupled with an exterior edge of the first outletmanifold, wherein the first gas block is coupled to provide fluidcommunication to the central aperture of the first outlet manifold; anda second gas block coupled with an exterior edge of the second outletmanifold, wherein the second gas block is coupled to provide fluidcommunication to the central aperture of the second outlet manifold. 17.The semiconductor processing system of claim 16, further comprising agas feedthrough extending through the lid plate and coupled with each ofthe first gas block and the second gas block.
 18. The semiconductorprocessing system of claim 17, wherein the semiconductor processingsystem includes two gas feedthroughs extending through the lid plate andcoupled with each of the first gas block and the second gas block,wherein the lid plate defines an aperture through which the gasfeedthrough extends, wherein the lid plate is hingedly coupled with achamber body of the semiconductor processing system, and wherein thechamber body comprises an elastomeric element on which the gasfeedthrough seats when the lid plate is closed upon the chamber body.